PART |
Description |
Maker |
UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc. EPCOS AG
|
A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes 4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation Intel Corp.
|
CY7C1360C-166AXC CY7C1360C-166BGC CY7C1360C-166BZI |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 QDR SRAM, 3 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 QDR SRAM, 3 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 3.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
F49L400BA |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory 4兆位(为512k × 8/256K × 16V时仅闪存的CMOS
|
Elite Semiconductor Memory Technology, Inc.
|
CY7C1356C-166BZI CY7C1356C-166BZXI CY7C1356C-166BZ |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 3.2 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 256K X 36 ZBT SRAM, 2.8 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY14V104NA-BA45XI |
4 Mbit (512K x 8/256K x 16) nvSRAM
|
Cypress
|
CY14B104LA-ZS20XI CY14B104LA-BA45XC CY14B104NA-BA4 |
4 Mbit (512K x 8/256K x 16) nvSRAM
|
http:// Cypress Semiconductor
|
CY7C1363C-133AXC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
BALBSGSERIES |
4 Mbit (512K x 8/256K x 16) nvSRAM 超小型封装调节器IC
|
Kingbright, Corp.
|
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
|
GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
|
http:// GSI Technology, Inc.
|